Deposition of nanoporous BiVO4 thin-film photocatalyst by reactive magnetron sputtering: Effect of total pressure and substrate

نویسندگان

چکیده

Nanoporous BiVO4 thin films were deposited using reactive magnetron sputtering in Ar and O2 atmosphere, on various substrates, employing pulsed direct-current (DC) power supplies applied to metallic Bi V targets for rapid deposition. The procedure was followed by a post-annealing treatment air crystallize the photoactive monoclinic scheelite structure. influence of total pressure substrate crystal structure, morphology, microstructure, optical photocatalytic properties investigated. crystallization structure fused silica starts at 250 °C are stable up 600 °C. morphology is rather dense, despite high (>2 Pa), with embedded nanopores. Among silica, one 4.5 Pa exhibits highest porosity (52%), lowest bandgap (2.44 eV) it shows activity degradation Rhodamine-B (26% after 7 h) under visible light irradiation. film silicon photoactivity (53% h). Lack hypsochromic shift UV−Vis temporal absorption spectra dominance chromophore cleavage pathway photodecomposition.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

The Effect of Substrate on Structural and Electrical Properties of Cu3N Thin Film by DC Reactive Magnetron Sputtering

The aim of this paper is to study the effect of substrate on the Cu3N thin films. At first Cu3N thin films are prepared using DC magnetron sputtering system. Then structural properties, surface roughness, and electrical resistance are studied using X-ray diffraction (XRD), the atomic force microscope (AFM) and four-point probe techniques respectively. Finally, the results are investigated and c...

متن کامل

Optimization of DC reactive magnetron sputtering deposition process for efficient YSZ electrolyte thin film SOFC

Yttria-stabilized zirconia (YSZ, ZrO2:Y2O3) thin films were deposited by reactive DC magnetron sputtering with a high deposition rate from a metallic target of Zr/Y in an argon/oxygen atmosphere. Plasma parameters and composition analysis of the gas phase reveal that the sputtering process in the “compound” mode is reached for a 2.5 sccm oxygen flow rate. Deposition onto silicon in “metal” mode...

متن کامل

DEPOSITION OF THIN TiO2 FILMS BY DC MAGNETRON SPUTTERING METHOD

Sputter deposition process is another old technique being used in modern semiconductor industries. Sputtering is a process that can deposit TiO2 material on wafer/glass substrates. In this process target is connected to negative high voltage. Further argon gas is introduced into the chamber and is ionized to a positive charge. The positively charged argon atoms are attracted and strike the nega...

متن کامل

Morphology of Thin Aluminum Film Grown by DC Magnetron Sputtering onto SiO2 on Si(100) Substrate

The morphology and grown mechanism of aluminum films from 3nm to 30nm in thickness onto thermal SiO2 on Si(100) substrates have been studied by atomic force microscopy and TCR measurement. The thin films prepared by dc magnetron sputtering at 450°C is composed of islands of aluminum. The island density, distribution of island size, height, and shape are studied.

متن کامل

Deposition of Visible Light Active Photocatalytic Bismuth Molybdate Thin Films by Reactive Magnetron Sputtering

Bismuth molybdate thin films were deposited by reactive magnetron co-sputtering from two metallic targets in an argon/oxygen atmosphere, reportedly for the first time. Energy dispersive X-ray spectroscopy (EDX) analysis showed that the ratio of bismuth to molybdenum in the coatings can be effectively controlled by varying the power applied to each target. Deposited coatings were annealed in air...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Transactions of Nonferrous Metals Society of China

سال: 2022

ISSN: ['1003-6326', '2210-3384']

DOI: https://doi.org/10.1016/s1003-6326(22)65846-1